Determination of the laterally homogeneous barrier height...

Materials Science in Semiconductor Processing 2010 Vol. 13; Iss. 5-6

Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (1 1 1)

A. Chawanda, K.T. Roro, F.D. Auret, W. Mtangi, C. Nyamhere, J. Nel, L. Leach
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Volume:
13
Year:
2010
Language:
english
Pages:
5
DOI:
10.1016/j.mssp.2011.05.001
File:
PDF, 480 KB
english, 2010
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