A novel 4H-SiC MESFET with a L-gate and a partial p-type spacer
Hujun Jia, Hu Zhang, Yintang YangVolume:
15
Year:
2012
Language:
english
Pages:
1
DOI:
10.1016/j.mssp.2011.09.008
File:
PDF, 446 KB
english, 2012