The equivalence of displacement damage in silicon bipolar...

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 2012 Vol. 677; Iss. none

The equivalence of displacement damage in silicon bipolar junction transistors

Chaoming Liu, Xingji Li, Hongbin Geng, Erming Rui, Lixin Guo, Jianqun Yang, Liyi Xiao
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Volume:
677
Year:
2012
Language:
english
Pages:
6
DOI:
10.1016/j.nima.2012.02.045
File:
PDF, 573 KB
english, 2012
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