Diffusion simulations of boron implanted at low energy (500...

Diffusion simulations of boron implanted at low energy (500 eV) in crystalline silicon

L. Ihaddadene-Le Coq, J. Marcon, A. Dush-Nicolini, K. Masmoudi, K. Ketata
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Volume:
216
Year:
2004
Language:
english
Pages:
5
DOI:
10.1016/j.nimb.2003.11.051
File:
PDF, 282 KB
english, 2004
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