Investigation of defects in reactive ion-implanted silicon

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2004 Vol. 222; Iss. 1-2

Investigation of defects in reactive ion-implanted silicon

G. Bhatt, A.D. Yadav, S.K. Dubey, T.K. Gundu Rao
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Volume:
222
Year:
2004
Language:
english
Pages:
6
DOI:
10.1016/j.nimb.2003.12.092
File:
PDF, 311 KB
english, 2004
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