Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
2004 Vol. 219-220; Iss. none
Depth profiles of H, C, O, Al and Si implants in a GaN substrate using trace element accelerator mass spectrometry
Lee J. Mitchell, G.V. Ravi Prasad, Primoz Pelicon, Eric B. Smith, Floyd D. McDanielVolume:
219-220
Year:
2004
Language:
english
Pages:
4
DOI:
10.1016/j.nimb.2004.01.101
File:
PDF, 252 KB
english, 2004