Electrical and structural properties of polycrystalline...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2012 Vol. 272; Iss. none

Electrical and structural properties of polycrystalline 3C-SiC layer regrown from amorphized 4H-SiC(0 0 0 1) by P and Al ion implantations

Tomoaki Nishimura, Masataka Satoh, Takeshi Jinushi, Yukio Saitou, Tohru Nakamura
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Volume:
272
Year:
2012
Language:
english
Pages:
4
DOI:
10.1016/j.nimb.2011.01.114
File:
PDF, 537 KB
english, 2012
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