The sensitivity of 100 nm RADFETs with zero gate...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2011 Vol. 269; Iss. 23

The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy(Si)

Goran S. Ristić, Nikola D. Vasović, Milojko Kovačević, Aleksandar B. Jakšić
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Volume:
269
Year:
2011
Language:
english
Pages:
6
DOI:
10.1016/j.nimb.2011.08.015
File:
PDF, 782 KB
english, 2011
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