Epitaxial growth of Ge nanoislands on Si/Ge heterostructure...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2012 Vol. 282; Iss. none

Epitaxial growth of Ge nanoislands on Si/Ge heterostructure by ion-assisted MBE method

Kh.B. Ashurov, F. Djurabekova, S.E. Maksimov, A.I. Nikiforov, S. Tadjimuratov, B.L. Oksengendler
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Volume:
282
Year:
2012
Language:
english
Pages:
1
DOI:
10.1016/j.nimb.2011.08.059
File:
PDF, 765 KB
english, 2012
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