Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
2012 Vol. 274; Iss. none
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Depth profiling of high energy nitrogen ions implanted in the 〈1 0 0〉, 〈1 1 0〉 and randomly oriented silicon crystals
M. Erić, S. Petrović, M. Kokkoris, A. Lagoyannis, V. Paneta, S. Harissopulos, I. TelečkiVolume:
274
Year:
2012
Language:
english
Pages:
6
DOI:
10.1016/j.nimb.2011.12.008
File:
PDF, 592 KB
english, 2012