Impact of ZnO gate interfacial layer on piezoelectric...

Sensors and Actuators A: Physical 2011 Vol. 172; Iss. 2

Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor

T. Lalinský, G. Vanko, M. Vallo, M. Držík, J. Bruncko, J. Jakovenko, V. Kutiš, I. Rýger, Š. Haščík, M. Husák
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Volume:
172
Year:
2011
Language:
english
Pages:
6
DOI:
10.1016/j.sna.2011.09.028
File:
PDF, 818 KB
english, 2011
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