Device characteristics for Pt–Ti–O gate Si–MISFETs hydrogen...

Device characteristics for Pt–Ti–O gate Si–MISFETs hydrogen gas sensors

Toshiyuki Usagawa, Yota Kikuchi
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Volume:
160
Year:
2011
Language:
english
Pages:
10
DOI:
10.1016/j.snb.2011.07.020
File:
PDF, 2.87 MB
english, 2011
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