A study of N-induced traps due to a nitrided gate in...

Solid-State Electronics 2011 Vol. 65-66; Iss. none

A study of N-induced traps due to a nitrided gate in high-κ/metal gate nMOSFETs and their impact on electron mobility

M. Cassé, X. Garros, O. Weber, F. Andrieu, G. Reimbold, F. Boulanger
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Volume:
65-66
Year:
2011
Language:
english
Pages:
7
DOI:
10.1016/j.sse.2011.06.015
File:
PDF, 1.25 MB
english, 2011
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