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Highly scaled (Lg ∼ 56 nm)...

Solid-State Electronics 2011 Vol. 65-66; Iss. none

Highly scaled (Lg ∼ 56 nm) gate-last Si tunnel field-effect transistors with ION > 100 μA/μm

Wei-Yip Loh, Kanghoon Jeon, Chang Yong Kang, Jungwoo Oh, Tsu-Jae King Liu, Hsing-Huang Tseng, Wade Xiong, Prashant Majhi, Raj Jammy, Chenming Hu
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Volume:
65-66
Year:
2011
Language:
english
Pages:
6
DOI:
10.1016/j.sse.2011.06.019
File:
PDF, 660 KB
english, 2011
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