Dual strained channel CMOS in FDSOI architecture: New...

Solid-State Electronics 2011 Vol. 65-66; Iss. none

Dual strained channel CMOS in FDSOI architecture: New insights on the device performance

C. Le Royer, M. Cassé, D. Cooper, F. Andrieu, O. Weber, L. Brevard, P. Perreau, J.-F. Damlencourt, S. Baudot, B. Prévitali, C. Tabone, F. Allain, P. Scheiblin, C. Rauer, C. Figuet, C. Aulnette, N. Dav
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Volume:
65-66
Year:
2011
Language:
english
Pages:
7
DOI:
10.1016/j.sse.2011.06.024
File:
PDF, 1.41 MB
english, 2011
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