SOI 1T-DRAM cells with variable channel length and...

Solid-State Electronics 2011 Vol. 65-66; Iss. none

SOI 1T-DRAM cells with variable channel length and thickness: Experimental comparison of programming mechanisms

Alexandre Hubert, Maryline Bawedin, Georges Guegan, Thomas Ernst, Olivier Faynot, Sorin Cristoloveanu
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Volume:
65-66
Year:
2011
Language:
english
Pages:
7
DOI:
10.1016/j.sse.2011.06.028
File:
PDF, 823 KB
english, 2011
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