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Temperature dependence of the transport properties of spin field-effect transistors built with InAs and Si channels
D. Osintsev, V. Sverdlov, Z. Stanojević, A. Makarov, S. SelberherrVolume:
71
Year:
2012
Language:
english
Pages:
5
DOI:
10.1016/j.sse.2011.10.015
File:
PDF, 464 KB
english, 2012