Impact of strain and Ge concentration on the performance of...

Solid-State Electronics 2012 Vol. 71; Iss. none

Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors

M. Schmidt, R.A. Minamisawa, S. Richter, R. Luptak, J.-M. Hartmann, D. Buca, Q.T. Zhao, S. Mantl
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Volume:
71
Year:
2012
Language:
english
Pages:
6
DOI:
10.1016/j.sse.2011.10.018
File:
PDF, 952 KB
english, 2012
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