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20 nm Gate length Schottky MOSFETs with ultra-thin NiSi/epitaxial NiSi2 source/drain
L. Knoll, Q.T. Zhao, R. Luptak, S. Trellenkamp, K.K. Bourdelle, S. MantlVolume:
71
Year:
2012
Language:
english
Pages:
5
DOI:
10.1016/j.sse.2011.10.026
File:
PDF, 1.02 MB
english, 2012