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Analyzing the current crowding effect induced by oxygen adsorption of amorphous InGaZnO thin film transistor by capacitance–voltage measurements
Sheng-Yao Huang, Ting-Chang Chang, Min-Chen Chen, Fu-Yen Jian, Shih-Cheng Chen, Te-Chih Chen, Jing-Ling Jheng, Mei-Jheng Lou, Fon-Shan Yeh (Huang)Volume:
69
Year:
2012
Language:
english
Pages:
3
DOI:
10.1016/j.sse.2011.11.005
File:
PDF, 728 KB
english, 2012