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GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics
M. Galeti, M. Rodrigues, J.A. Martino, N. Collaert, E. Simoen, C. ClaeysVolume:
70
Year:
2012
Language:
english
Pages:
6
DOI:
10.1016/j.sse.2011.11.015
File:
PDF, 591 KB
english, 2012