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Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide
C.H. Cheng, P.C. Chen, Y.H. Wu, M.J. Wu, F.S. Yeh, Albert ChinVolume:
73
Year:
2012
Language:
english
Pages:
4
DOI:
10.1016/j.sse.2012.03.005
File:
PDF, 357 KB
english, 2012