Room temperature process for chemical vapor deposition of...

Room temperature process for chemical vapor deposition of amorphous silicon carbide thin film using monomethylsilane gas

Hitoshi Habuka, Yusuke Ando, Masaki Tsuji
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Volume:
206
Year:
2011
Language:
english
Pages:
4
DOI:
10.1016/j.surfcoat.2011.09.037
File:
PDF, 709 KB
english, 2011
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