Hall Effect due to channeled pinning potential in Nb thin...

Hall Effect due to channeled pinning potential in Nb thin films

T.C. Wu, Y.H. Chen, M.W. Yang, R. Cao, T.J. Yang, J.C. Wu, Lance Horng
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Volume:
519
Year:
2011
Language:
english
Pages:
3
DOI:
10.1016/j.tsf.2011.03.080
File:
PDF, 651 KB
english, 2011
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