Modeling of amorphous InGaZnO thin film transistors using...

Modeling of amorphous InGaZnO thin film transistors using an empirical mobility function based on the exponential deep and tail states

Jae-Heon Shin, Woo-Seok Cheong, Chi-Sun Hwang, Sung Mook Chung
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Volume:
520
Year:
2012
Language:
english
Pages:
3
DOI:
10.1016/j.tsf.2011.06.088
File:
PDF, 241 KB
english, 2012
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