Gas-source molecular beam epitaxy of Si(111) on Si(110) substrates by insertion of 3C-SiC(111) interlayer for hybrid orientation technology
Rolando Bantaculo, Eiji Saitoh, Yu Miyamoto, Hiroyuki Handa, Maki SuemitsuVolume:
520
Year:
2011
Language:
english
Pages:
4
DOI:
10.1016/j.tsf.2011.06.090
File:
PDF, 571 KB
english, 2011