![](/img/cover-not-exists.png)
Depth-dependent etch pit density in Ge epilayer on Si substrate with a self-patterned Ge coalescence island template
Shihao Huang, Cheng Li, Zhiwen Zhou, Chengzhao Chen, Yuanyu Zheng, Wei Huang, Hongkai Lai, Songyan ChenVolume:
520
Year:
2012
Language:
english
Pages:
4
DOI:
10.1016/j.tsf.2011.09.023
File:
PDF, 769 KB
english, 2012