Depth-dependent etch pit density in Ge epilayer on Si...

Depth-dependent etch pit density in Ge epilayer on Si substrate with a self-patterned Ge coalescence island template

Shihao Huang, Cheng Li, Zhiwen Zhou, Chengzhao Chen, Yuanyu Zheng, Wei Huang, Hongkai Lai, Songyan Chen
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Volume:
520
Year:
2012
Language:
english
Pages:
4
DOI:
10.1016/j.tsf.2011.09.023
File:
PDF, 769 KB
english, 2012
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