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The characteristics of sub-10 nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors
Moongyu Jang, Seongjae LeeVolume:
520
Year:
2012
Language:
english
Pages:
4
DOI:
10.1016/j.tsf.2011.09.081
File:
PDF, 782 KB
english, 2012