Stability and high-frequency operation of amorphous...

Thin Solid Films 2012 Vol. 520; Iss. 10

Stability and high-frequency operation of amorphous In–Ga–Zn–O thin-film transistors with various passivation layers

Kenji Nomura, Toshio Kamiya, Hideo Hosono
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Volume:
520
Year:
2012
Language:
english
Pages:
5
DOI:
10.1016/j.tsf.2011.10.068
File:
PDF, 711 KB
english, 2012
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