Low temperature (~ 250 °C) layer exchange crystallization of Si1 − xGex (x = 1–0) on insulator for advanced flexible devices
Jong-Hyeok Park, Masashi Kurosawa, Naoyuki Kawabata, Masanobu Miyao, Taizoh SadohVolume:
520
Year:
2012
Language:
english
Pages:
3
DOI:
10.1016/j.tsf.2011.10.087
File:
PDF, 554 KB
english, 2012