Growth of high Ge content SiGe on (110) oriented Si wafers

Thin Solid Films 2012 Vol. 520; Iss. 8

Growth of high Ge content SiGe on (110) oriented Si wafers

A. Hikavyy, W. Vanherle, B. Vincent, J. Dekoster, H. Bender, A. Moussa, L. Witters, T. Hoffman, R. Loo
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Volume:
520
Year:
2012
Language:
english
Pages:
6
DOI:
10.1016/j.tsf.2011.10.123
File:
PDF, 1.28 MB
english, 2012
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