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The effect of metallization contact resistance on the measurement of the field effect mobility of long-channel unannealed amorphous In–Zn–O thin film transistors
Sunghwan Lee, Hongsik Park, David C. PaineVolume:
520
Year:
2012
Language:
english
Pages:
5
DOI:
10.1016/j.tsf.2011.11.067
File:
PDF, 708 KB
english, 2012