Effects of oxygen stoichiometry on resistive switching...

Thin Solid Films 2012 Vol. 520; Iss. 16

Effects of oxygen stoichiometry on resistive switching properties in amorphous tungsten oxide films

B.U. Jang, A.I. Inamdar, Jongmin Kim, Woong Jung, Hyunsik Im, Hyungsang Kim, J.P. Hong
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Volume:
520
Year:
2012
Language:
english
Pages:
1
DOI:
10.1016/j.tsf.2012.03.111
File:
PDF, 819 KB
english, 2012
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