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RTA processing of ionic boron implanted in silicon through screen oxide films: effects of some technological parameters
L. Kaabi, C. Gontrand, J.C. Bureau, Z. Sassi, J. Ben Brahim, B. BallandVolume:
23
Year:
1998
Language:
english
Pages:
6
DOI:
10.1016/s0151-9107(98)80092-5
File:
PDF, 425 KB
english, 1998