Oxide growth retardation induced by rapid thermal annealing...

Microelectronic Engineering 2000 Vol. 51-52; Iss. none

Oxide growth retardation induced by rapid thermal annealing in Czochralsky-grown silicon consequence on the efficiency and the stability of internal gettering of Cr

N.E Chabane-Sari, B Bouazza, D Barbier
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Volume:
51-52
Year:
2000
Language:
english
Pages:
13
DOI:
10.1016/s0167-9317(99)00507-9
File:
PDF, 892 KB
english, 2000
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