Electron paramagnetic resonance study of S2 defects in...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2000 Vol. 170; Iss. 1-2

Electron paramagnetic resonance study of S2 defects in hydrogen-implanted silicon

B Rakvin, B Pivac, R Tonini, F Corni, G Ottaviani
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Volume:
170
Year:
2000
Language:
english
Pages:
9
DOI:
10.1016/s0168-583x(00)00078-1
File:
PDF, 177 KB
english, 2000
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