Carrier activation in in situ Si-doped GaAs layers...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2001 Vol. 175-177; Iss. none

Carrier activation in in situ Si-doped GaAs layers fabricated by a focused Si ion beam and molecular beam epitaxy combined system

Takuo Hada, Hirotaka Miyamoto, Junichi Yanagisawa, Fujio Wakaya, Yoshihiko Yuba, Kenji Gamo
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Volume:
175-177
Year:
2001
Language:
english
Pages:
5
DOI:
10.1016/s0168-583x(00)00547-4
File:
PDF, 102 KB
english, 2001
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