Lattice location and annealing behavior of Mn implanted GaN

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2002 Vol. 191; Iss. 1-4

Lattice location and annealing behavior of Mn implanted GaN

C. Liu, E. Alves, A.R. Ramos, M.F. da Silva, J.C. Soares, T. Matsutani, M. Kiuchi
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Volume:
191
Year:
2002
Language:
english
Pages:
5
DOI:
10.1016/s0168-583x(02)00608-0
File:
PDF, 321 KB
english, 2002
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