Different strain relaxation mechanisms in strained...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2002 Vol. 198; Iss. 1-2

Different strain relaxation mechanisms in strained Si/Si1−xGex/Si heterostructures by high dose B+ and BF2+ doping

ChangChun Chen, Ann-Chatrin Lindgren, ShiLi Zhang, DeZhang Zhu, A. Vantomme
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Volume:
198
Year:
2002
Language:
english
Pages:
7
DOI:
10.1016/s0168-583x(02)01491-x
File:
PDF, 173 KB
english, 2002
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