Behavior of hydrogen implanted into Si-implanted SiO2

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2003 Vol. 209; Iss. none

Behavior of hydrogen implanted into Si-implanted SiO2

Mitsuharu Ikeda, Ryuta Mitsusue, Masaharu Nakagawa, Satoshi Kondo, Makoto Imai, Nobutsugu Imanishi
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Volume:
209
Year:
2003
Language:
english
Pages:
5
DOI:
10.1016/s0168-583x(02)02008-6
File:
PDF, 111 KB
english, 2003
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