Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
1987 Vol. 19-20; Iss. part-P2
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Dopant distribution and electrical activation of Si implanted GaAs by short time annealing
D. Panknin, E. Wieser, R. Grötzschel, C.E. Richter, M. Gericke, Ya.V. Fattachov, I.B. KhaibullinVolume:
19-20
Year:
1987
Language:
english
Pages:
4
DOI:
10.1016/s0168-583x(87)80098-8
File:
PDF, 312 KB
english, 1987