Behaviour of radiation defects under the influence of...

Behaviour of radiation defects under the influence of mechanical strain in ion-implanted silicon

Yu. Suprun-Belevich, L. Palmetshofer
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Volume:
127-128
Year:
1997
Language:
english
Pages:
5
DOI:
10.1016/s0168-583x(96)01107-x
File:
PDF, 477 KB
english, 1997
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