Transmission electron microscopy investigation of the...

Transmission electron microscopy investigation of the crystal-amorphous-polycrystal transition in silicon during bismuth room temperature ion implantation

J. Fauré, Ch. Angelov, M. Kalitzova, S. Simov
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Volume:
132
Year:
1997
Language:
english
Pages:
7
DOI:
10.1016/s0168-583x(97)00420-5
File:
PDF, 608 KB
english, 1997
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