Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
1998 Vol. 146; Iss. 1-4
Impact of high energy ion implantation on dopant distribution in silicon
E.P Neustroev, I.V Antonova, V.I Obodnikov, V.P Popov, V.A Skuratov, S.A Smagulova, A.Yu DidykVolume:
146
Year:
1998
Language:
english
Pages:
6
DOI:
10.1016/s0168-583x(98)00471-6
File:
PDF, 142 KB
english, 1998