Dwell-time dependence of the defect accumulation in focused...

Dwell-time dependence of the defect accumulation in focused ion beam synthesis of CoSi2

Lothar Bischoff, Stephan Hausmann, Matthias Voelskow, Jochen Teichert
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Volume:
147
Year:
1999
Language:
english
Pages:
5
DOI:
10.1016/s0168-583x(98)00533-3
File:
PDF, 342 KB
english, 1999
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