Peculiarities of defect generation in Si+-implanted GaAs...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 1999 Vol. 147; Iss. 1-4

Peculiarities of defect generation in Si+-implanted GaAs (2 1 1)

V.T. Bublik, S.B. Evgeniev, S.P. Ivanov, A.A. Kalinin, M.G. Milvidskii, A.W. Nemirovskii
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Volume:
147
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0168-583x(98)00604-1
File:
PDF, 115 KB
english, 1999
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