Modelling high-temperature co-implantation of N+ and Al+...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 1999 Vol. 147; Iss. 1-4

Modelling high-temperature co-implantation of N+ and Al+ ions in silicon carbide: the effect of stress on the implant and damage distributions

P.V. Rybin, D.V. Kulikov, Yu.V. Trushin, R.A. Yankov, G. Ecke, W. Fukarek, W. Skorupa, J. Pezoldt
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Volume:
147
Year:
1999
Language:
english
Pages:
7
DOI:
10.1016/s0168-583x(98)00608-9
File:
PDF, 184 KB
english, 1999
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