Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
1999 Vol. 148; Iss. 1-4
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Dopant profile engineering of advanced Si MOSFET’s using ion implantation
P.A Stolk, Y.V Ponomarev, J Schmitz, A.C.M.C van Brandenburg, R Roes, A.H Montree, P.H WoerleeVolume:
148
Year:
1999
Language:
english
Pages:
5
DOI:
10.1016/s0168-583x(98)00662-4
File:
PDF, 274 KB
english, 1999