Deep level properties of erbium implanted epitaxially grown...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 1999 Vol. 148; Iss. 1-4

Deep level properties of erbium implanted epitaxially grown SiGe

M Mamor, F.D Auret, S.A Goodman, J Brink, M Hayes, F Meyer, A Vantomme, G Langouche, P.N.K Deenapanray
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Volume:
148
Year:
1999
Language:
english
Pages:
5
DOI:
10.1016/s0168-583x(98)00693-4
File:
PDF, 122 KB
english, 1999
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