Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
1999 Vol. 148; Iss. 1-4
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Bulk unipolar diodes formed in GaAs by ion implantation
S Hutchinson, M.J Kelly, R Gwilliam, B.J Sealy, M CarrVolume:
148
Year:
1999
Language:
english
Pages:
3
DOI:
10.1016/s0168-583x(98)00709-5
File:
PDF, 92 KB
english, 1999